期刊
APPLIED PHYSICS LETTERS
卷 99, 期 11, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3636407
关键词
-
资金
- Ministry of Science and Technology of China [2011CB933001, 2011CB933002]
- Fundamental Research Funds for the Central Universities
- National Science Foundation of China [61071013, 61001016]
Graphene/carbon nanotube (CNT) junctions were fabricated by depositing mechanically exfoliated graphene on substrate followed by direct chemical vapor deposition growth of CNT, and their electronic transport properties were investigated. Unlike metallic CNT/graphene junction with good contact, there exists an obvious Schottky barrier between semiconducting CNT and graphene due to the difference of their work functions, which lead to typical rectification properties and directionally field-effect behavior. (C) 2011 American Institute of Physics. [doi:10.1063/1.3636407]
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