期刊
APPLIED PHYSICS LETTERS
卷 99, 期 24, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3669696
关键词
-
资金
- National Science Foundation [ECCS-0823563]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [0823563] Funding Source: National Science Foundation
A low-operating voltage and stable pentacene field-effect transistor (FET) employing thin low-dielectric constant gate layer of poly (methyl methacrylate) (PMMA) dissolved in propylene carbonate (PC) has been realized. This device exhibiting high field-effect mobility, a threshold voltage of 1V, and a small sub-threshold slope at operating voltages below 3V is compared with an FET cast from PMMA film dissolved in a low dipole moment solvent. The negligible hysteresis and excellent electrical stability of FETs under gate bias stress with the use of PC are traceable to the low density of trap states in PMMA bulk and at the interfaces. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3669696]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据