期刊
APPLIED PHYSICS LETTERS
卷 98, 期 15, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3578403
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资金
- National Science Council [NSC 99-2628-E-009-010, 97-2221-E-009-036-MY3]
In this study, we propose a floating dual gate (FDG) indium-gallium-zinc-oxide (IGZO) thin film transistor (TFT) with a floating metal back gate that is directly contact with IGZO without a dielectric layer. The floating back gate effect is investigated by changing the work function (phi) of the back gate. The FDG IGZO TFT exhibits an improved field-effect mobility (mu), unchanged subthreshold swing (SS), high on/off current ratio, and a tunable threshold voltage ranged (V(th)) from -5.0 to + 7.9 V without an additional back gate power supply. (C) 2011 American Institute of Physics. [doi:10.1063/1.3578403]
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