期刊
APPLIED PHYSICS LETTERS
卷 99, 期 1, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3609326
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资金
- Office of Naval Research [N00014-07-1-0886]
- Research Corporation
- WVNano STEM [HEPC.dsr.09013]
The structural and electronic properties of thin Bi2Se3 films grown on Al2O3 (110) by molecular beam epitaxy are investigated. The epitaxial films grow in the Frank-van der Merwe mode and are c-axis oriented. They exhibit the highest crystallinity, the lowest carrier concentration, and optimal stoichiometry at a substrate temperature of 200 degrees C determined by the balance between surface kinetics and desorption of Se. The crystallinity of the films improves with increasing Se/Bi flux ratio. Our results enable studies of thin topological insulator films on inert, non-conducting substrates that allow optical access to both film surfaces. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3609326]
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