期刊
APPLIED PHYSICS LETTERS
卷 99, 期 25, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3671365
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资金
- foundation Nanosciences aux limites de la Nanoelectronique
- French Agence Nationale de la Recherche: Bonafo [ANR-08-Nano-031-01]
Catalyst-free GaN wires with 100-200 nm diameters are grown on bare c-sapphire substrates by a metal-organic vapor phase epitaxy approach using both low V/III ratio and V-III precursor flows that favor a reaction-limited growth regime. The polarity control of the initial seeds allows obtaining pencil-shape wires with very sharp pyramids at their top (similar to 5 nm diameter). These defect-free nanowires evidence excellent structural and optical properties as shown by a sharp photoluminescence linewidth (1-3meV at 5K). (C) 2011 American Institute of Physics. [doi: 10.1063/1.3671365]
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