期刊
APPLIED PHYSICS LETTERS
卷 99, 期 13, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3645623
关键词
diffusion; electron energy loss spectra; hafnium compounds; multilayers; oxidation; random-access storage; reduction (chemical); titanium compounds; transmission electron microscopy
资金
- Ministry of Education (MOE), Singapore [T206B1205]
- Singapore University of Technology and Design (SUTD) [SRG ASPE 2010 004]
We demonstrate the realization of a forming-step free resistive random access memory (RRAM) device using a HfO(x)/TiO(x)/HfO(x)/TiO(x) multilayer structure, as a replacement for the conventional HfO(x)-based single layer structure. High-resolution transmission electron microscopy (HRTEM), along with electron energy loss spectroscopy (EELS) analysis has been carried out to identify the distribution and the role played by Ti in the RRAM stack. Our results show that Ti out-diffusion into the HfO(x) layer is the chemical cause of forming-free behavior. Moreover, the capability of Ti to change its ionic state in HfO(x) eases the reduction-oxidation (redox) reaction, thus lead to the RRAM devices performance improvements. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3645623]
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