期刊
APPLIED PHYSICS LETTERS
卷 98, 期 25, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3600643
关键词
semiconductor superlattices
We illustrate how the linear combination of zone center bulk bands combined with the full-zone k center dot p method can be used to accurately compute the electronic states in semiconductor nanostructures. To this end we consider a recently developed 30-band model which carefully reproduces atomistic calculations and experimental results of bulk semiconductors. The present approach is particularly suited both for short-period superlattices and large nanostructures where a three-dimensional electronic structure is required. This is illustrated by investigating ultrathin GaAs/AlAs superlattices. (C) 2011 American Institute of Physics. [doi:10.1063/1.3600643]
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