Article
Materials Science, Multidisciplinary
Ioannis Leontis, Gabriela Augusta Prando, Konstantinos Andreas Anastasiou, Agnes Bacon, Monica Felicia Craciun, Saverio Russo
Summary: Ballistic graphene p-n junctions (GPNJs) are fabricated using physisorbed Zn adatoms, allowing for low-cost and scalable production of electrical counterparts to optical circuits. Spatially resolved Raman spectroscopy through a quartz transparent substrate accurately maps charge doping and strain in the graphene/Zn interface and beneath the metal layer. Electrical measurements and modeling confirm the ballistic nature of charge transport up to room temperature.
Article
Chemistry, Multidisciplinary
Elena Titova, Dmitry Mylnikov, Mikhail Kashchenko, Ilya Safonov, Sergey Zhukov, Kirill Dzhikirba, Kostya S. Novoselov, Denis A. Bandurin, Georgy Alymov, Dmitry Svintsov
Summary: Graphene's high carrier mobility, compatibility with on-chip waveguides and transistors, and small heat capacitance make it a promising material for the detection of terahertz (THz) radiation. However, the weak reaction of graphene's physical properties to the detected radiation is due to the absence of a band gap. This study investigates the effect of electrically induced band gap on THz detection in graphene bilayer with split-gate p-n junction, and demonstrates that the induction of a band gap leads to increased current and voltage responsivities.
Article
Materials Science, Multidisciplinary
Yue-Xing Chen, Xiao-Lei Shi, Zhuang-Hao Zheng, Fu Li, Wei-Di Liu, Wen-Yi Chen, Xin-Ru Li, Guang-Xing Liang, Jing-Ting Luo, Ping Fan, Zhi-Gang Chen
Summary: This study introduces p-type two-dimensional WSe2 nanoinclusions into n-type polycrystalline SnSe for the formation of p-n junctions, resulting in enhanced thermoelectric performance through phonon scattering and Fermi level control.
MATERIALS TODAY PHYSICS
(2021)
Article
Chemistry, Physical
Pingjian Li, Kesai Xu, Yu Zhou, Yuanfu Chen, Wanli Zhang, Zegao Wang, Xuesong Li
Summary: Theoretical calculations suggest that sulfur doping can modulate the electrical properties of graphene, with sulfur-hydrogen structures being more effective at n-type doping than thiophene-like sulfur-carbon structures. The synthesized monolayer sulfur-doped graphene film exhibits n-type behavior in air, with a high electron concentration and mobility, surpassing previous reports. This study not only demonstrates the potential applications of sulfur-doped graphene films, but also enhances our understanding of the impact of sulfur structures on their properties.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Biochemistry & Molecular Biology
Yan Fan, Tao Wang, Yinwei Qiu, Yinli Yang, Qiubo Pan, Jun Zheng, Songwei Zeng, Wei Liu, Gang Lou, Liang Chen
Summary: Graphene p-n junctions have important applications in optical interconnection and low-power integrated circuits. Our study introduces a new type of pure graphene oxide (pGO) vertical p-n junction, demonstrating significant rectification effects and photoelectric responses. Additionally, our work offers a simple and convenient method for preparing undoped GO vertical p-n junctions, showing great potential for applications in electronics and sensors.
Article
Chemistry, Multidisciplinary
James Nicolas Pagaduan, Nicholas Hight-Huf, Avdhoot Datar, Yehiel Nagar, Michael Barnes, Doron Naveh, Ashwin Ramasubramaniam, Reika Katsumata, Todd Emrick
Summary: The engineering of work function of 2D materials with polymer coatings can significantly reduce the work function of monolayer graphene. The chemical structure of the polymer zwitterions plays a crucial role in modulating the work function, with the piperidinyl-substituted version showing the largest reduction in work function.
Article
Chemistry, Multidisciplinary
Jesse Balgley, Jackson Butler, Sananda Biswas, Zhehao Ge, Samuel Lagasse, Takashi Taniguchi, Kenji Watanabe, Matthew Cothrine, David G. Mandrus, Jairo Velasco, Roser Valenti, Erik A. Henriksen
Summary: In this study, we demonstrate ultrasharp lateral p-n junctions in graphene using electronic transport, scanning tunneling microscopy, and first-principles calculations. These junctions are formed at the boundary between differently doped regions of a graphene sheet, with one side being intrinsic and the other side being charge-doped by proximity to an alpha-RuCl3 flake. Our results show potential variations on a sub 10 nm length scale in heterostructures of graphene, hexagonal boron nitride, and alpha-RuCl3. First-principles calculations reveal a sharp decay of charge-doping from the edge of the alpha-RuCl3 flake within just a few nanometers.
Article
Chemistry, Physical
Peng Zuo, Yefeng Liu, Xiaolei Liu, Weizhou Jiao, Ruixin Wang
Summary: A ternary phosphomolybdic acid-polyethyleneimine/graphene oxide nanocomposite was developed as a precursor for the controllable growth of molybdenum carbide nanostructure on graphene and the doping of N and P atoms. The hybrid exhibited remarkable electrocatalytic activity and high stability for hydrogen evolution reaction, making it a promising electrocatalyst.
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY
(2022)
Article
Engineering, Chemical
Mohammad Razaul Karim, Md. Nizam Uddin, Md. Aslam Shaikh, Md. Shamim Rahaman, Iqbal Ahmed Siddiquey, Md. Azharul Arafath, Md. Saidul Islam, Shinya Hayami, Khalid A. Alamry, Abdullah M. Asiri, Mohammed M. Rahman
Summary: This study observed modulated electron conductivity, p-n junction behavior, and light-harvesting semiconductivity in reduced graphene oxide. Different samples showed tunable electron conduction behavior, with rGOHS and rGOHV exhibiting photocatalytic activity and high water-splitting efficiency and dye degradation efficiency.
JOURNAL OF THE TAIWAN INSTITUTE OF CHEMICAL ENGINEERS
(2021)
Article
Chemistry, Physical
Ryuichi Kato, Masataka Hasegawa
Summary: Micropores, reconstruction defects, and heteroatoms have been introduced into monolayer graphene using photon energy in the ultraviolet region and reactive oxygen species. The defect density in graphene is affected by oxygen concentration and UV irradiation, with the dissociated oxygen species playing a crucial role in defect formation. UV irradiation under an oxygen atmosphere maintains the conductivity of defective graphene at the same level as pristine graphene, demonstrating a hole doping effect from oxygen atoms or molecules.
Article
Nanoscience & Nanotechnology
Xin Tong, Mohamed Cherif, Gaixia Zhang, Xinxing Zhan, Jugang Ma, Ali Almesrati, Francois Vidal, Yujun Song, Jerome P. Claverie, Shuhui Sun
Summary: Nitrogen and phosphorus-codoped graphene dots supported on nitrogen-doped three-dimensional graphene were synthesized by freezing-annealing process, serving as a metal-free catalyst for oxygen reduction reaction. The catalyst exhibited excellent ORR activity, higher tolerance to methanol, and better stability compared to commercial Pt/C, indicating the potential for various applications.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Materials Science, Multidisciplinary
Junqing Wen, Pei Lin, Yushun Han, Ning Li, Guoxiang Chen, Lihua Bai, Shaoli Guo, Hua Wu, Wanlin He, Jianmin Zhang
Summary: This paper discusses the ferromagnetic properties and origin of P-doped graphene-ZnO monolayers with and without defects. It is found that P doping leads to ferromagnetism in the system, and VZn induces ferromagnetism by producing O-2p electrons with the same spin direction. Both mechanisms can be observed at room temperature, and the Curie temperature of the doped systems is higher than room temperature, suggesting the potential of P-doped ZnO monolayers as diluted magnetic semiconductors.
MATERIALS CHEMISTRY AND PHYSICS
(2021)
Article
Nanoscience & Nanotechnology
Erik J. Lenferink, Trevor LaMountain, Teodor K. Stanev, Ethan Garvey, Kenji Watanabe, Takashi Taniguchi, Nathaniel P. Stern
Summary: Transition metal dichalcogenides (TMDs) are a promising solid-state platform for single photon emission. By utilizing local strain engineering and modulation of gate voltages, TMD devices can achieve simultaneous electrical pumping and tuning of localized exciton emission.
Article
Physics, Multidisciplinary
Peipei Zhang, Chao Wang, Yu-Xian Li, Lixue Zhai, Juntao Song
Summary: The transport properties of electrons in graphene p-n junction with uniform Kekule lattice distortion were studied using the tight-binding model and the Landauer-Buttiker formalism combined with the nonequilibrium Green's function method. Different shapes of Kekule graphene p-n junctions result in different electron transport behaviors, with Klein tunneling and resonance tunneling playing important roles. Moreover, under strong magnetic fields, resonance tunneling was observed, and disorder can enhance conductance.
NEW JOURNAL OF PHYSICS
(2023)
Article
Chemistry, Physical
V. M. Mikoushkin, E. A. Makarevskaya, D. E. Marchenko
Summary: Low-energy nitrogen ion implantation was used to modify the electronic structure and chemical composition of the n-GaAs surface, resulting in the formation of a p-n structure with a GaAs1-xNx alloy layer. This nano-heterostructure is expected to have attractive properties for infrared applications, without the need for wet lithography.
APPLIED SURFACE SCIENCE
(2022)
