☆ 4.6 Article

Atomistic study of electronic structure of PbSe nanowires

APPLIED PHYSICS LETTERS (2011)

期刊

APPLIED PHYSICS LETTERS

卷 98, 期 21, 页码 -

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AMER INST PHYSICS

DOI: 10.1063/1.3592577

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Physics, Applied

资金

MSD under SRC, Nanoelectronics Research Initiative through MIND
NSF [EEC-0228390]
Purdue University

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Lead Selenide (PbSe) is an attractive 'IV-VI' semiconductor material to design optical sensors, lasers, and thermoelectric devices. Improved fabrication of PbSe nanowires (NWs) enables the utilization of low dimensional quantum effects. The effect of cross-section size (W) and channel orientation on the band structure of PbSe NWs is studied using an 18 band sp(3)d(5) tight-binding theory. The band gap increases almost with the inverse of the W for all the orientations indicating weak symmetry dependence. [111] and [110] NWs show higher ballistic conductance for the conduction and valence band compared to [100] NWs due to the significant splitting of the projected L-valleys in [100] NWs. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3592577]

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