High-performance metal-semiconductor-metal InGaN photodetectors using CaF2 as the insulator

标题
High-performance metal-semiconductor-metal InGaN photodetectors using CaF2 as the insulator
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 98, Issue 10, Pages 103502
出版商
AIP Publishing
发表日期
2011-03-09
DOI
10.1063/1.3562326

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