期刊
APPLIED PHYSICS LETTERS
卷 98, 期 10, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3560982
关键词
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资金
- Portuguese Foundation of Science and Technology (FCT)
- Overseas Research Studentships Award
- Cambridge Overseas Trust
- DOE/SC/BES/MSED [DOE-AC0205CH11231]
The ambient stability of thin-film transistors (TFTs) based on zinc oxide (ZnO) nanowires embedded in poly (3,3'''-dialkyl-quarterthiophene) was monitored through time dependence of electrical characteristics over a period of 16 months. The hybrid-based TFT showed an initial hole mobility in the linear regime of 4.2 x 10(-4) cm(2)/V s. After 16 months storage in ambient conditions (exposed to air, moisture, and light) the mobility decreased to 2.3 x 10(-5) cm(2)/V s. Comparatively the organic-based TFT lost total carrier mobility after one month storage making the hybrid-based TFTs more suitable for transistor applications when improved stability combined with structural flexibility are required. (C) 2011 American Institute of Physics. [doi:10.1063/1.3560982]
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