期刊
APPLIED PHYSICS LETTERS
卷 99, 期 5, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3621857
关键词
-
资金
- EU project ONE-P [212311]
Staggered bottom-contact top-gate organic ferroelectric field-effect transistors are fabricated with poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) as ferroelectric gate and poly[bis(4-phenyl)( 2,4,6-trimethylphenyl)amine] as semiconductor. Polarization reversal of the ferroelectric gate is monitored by displacement transients in the gate current. By varying both the source and drain biases and by using fully and partially polarized transistors, we show that conductance switching only requires polarization of P(VDF-TrFE) at the source electrode. Polarization at the drain is irrelevant and does not impede charge extraction. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3621857]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据