Ion implantation synthesized copper oxide-based resistive memory devices

Copper oxide resistive memory layers have been synthesized by ion implantation. Devices fabricated from off-stoichiometric Cu2O exhibited unipolar switching in forward/reverse bias without a forming voltage. The on-state conduction of these devices is likely dominated by a metallic filament, which ruptures via Joule heating to transition the device to the high resistance off-state. Technology scaling was achieved by oxygen implanting copper filled vias. The resulting via-based memory devices exhibited unipolar resistive switching down to 48 nm in diameter. (C) 2011 American Institute of Physics. [doi:10.1063/1.3662036]