4.6 Article

Plasmon-enhanced low-intensity laser switching of gold::vanadium dioxide nanocomposites

期刊

APPLIED PHYSICS LETTERS
卷 98, 期 24, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.3593388

关键词

-

资金

  1. U.S. Department of Energy, Office of Science [DE-FG02-01ER45916]
  2. ITT Corporation's National Security Technology Applications Division
  3. William and Nancy McMinn Honor Scholarship
  4. U.S. Department of Energy (DOE) [DE-FG02-01ER45916] Funding Source: U.S. Department of Energy (DOE)

向作者/读者索取更多资源

Transient absorption of gold nanoparticle (NP) arrays covered by a 60 nm thick film of VO(2) was measured using a mechanically shuttered 785 nm pump laser and a 1550 nm cw probe. Even though the Au NPs constitute only 4% by volume of the nanocomposite, they increase the effective absorption coefficient by a factor of 1.5 and reduce the threshold laser power required to induce the semiconductor-to-metal transition (SMT) by as much as 37%. It is argued that the NPs function as thermal initiators for the SMT and as nanoradiators to increase the scattering and absorption of light into interband transitions of the VO(2). (C) 2011 American Institute of Physics. [doi:10.1063/1.3593388]

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

Article Engineering, Manufacturing

Non-Contact, Sub-Surface Detection of Alloy Segregation in Back-End of Line Copper Dual-Damascene Structures

Joyeeta Nag, Shishir Ray, Kriteshwar K. Kohli, Andrew H. Simon, Brian A. Cohen, Felipe Tijiwa-Birk, Christopher J. Parks, Siddarth A. Krishnan

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING (2015)

Article Physics, Condensed Matter

Heterogeneous nucleation and growth dynamics in the light-induced phase transition in vanadium dioxide

Nathaniel F. Brady, Kannatassen Appavoo, Minah Seo, Joyeeta Nag, Rohit P. Prasankumar, Richard F. Haglund, David J. Hilton

JOURNAL OF PHYSICS-CONDENSED MATTER (2016)

Article Nanoscience & Nanotechnology

Epitaxial VO2 Nanostructures: A Route to Large-Scale, Switchable Dielectric Metasurfaces

Filip Ligmajer, Lukas Kejik, Uddhab Tiwari, Meng Qiu, Joyeeta Nag, Martin Konecny, Tomas Sikola, Wei Jin, Richard F. Haglund, Kannatassen Appavoo, Dang Yuan Lei

ACS PHOTONICS (2018)

Article Chemistry, Multidisciplinary

Ultrafast Phase Transition via Catastrophic Phonon Collapse Driven by Plasmonic Hot-Electron Injection

Kannatassen Appavoo, Bin Wang, Nathaniel F. Brady, Minah Seo, Joyeeta Nag, Rohit P. Prasankumar, David J. Hilton, Sokrates T. Pantelides, Richard F. Haglund

NANO LETTERS (2014)

Article Physics, Applied

Thermal properties of carbon nitride toward use as an electrode in phase change memory devices

K. Aryana, J. T. Gaskins, J. Nag, J. C. Read, D. H. Olson, M. K. Grobis, P. E. Hopkins

APPLIED PHYSICS LETTERS (2020)

Article Multidisciplinary Sciences

Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices

Kiumars Aryana, John T. Gaskins, Joyeeta Nag, Derek A. Stewart, Zhaoqiang Bai, Saikat Mukhopadhyay, John C. Read, David H. Olson, Eric R. Hoglund, James M. Howe, Ashutosh Giri, Michael K. Grobis, Patrick E. Hopkins

Summary: Phase change memory (PCM) is a rapidly growing technology that offers advancements in storage-class memories and enables in-memory data processing. By manipulating the interfacial thermal resistance between the phase change unit and the electrodes, reductions in effective thermal conductivity and reset current can be achieved, leading to opportunities for power reduction in PCMs.

NATURE COMMUNICATIONS (2021)

Article Multidisciplinary Sciences

Tuning network topology and vibrational mode localization to achieve ultralow thermal conductivity in amorphous chalcogenides

Kiumars Aryana, Derek A. Stewart, John T. Gaskins, Joyeeta Nag, John C. Read, David H. Olson, Michael K. Grobis, Patrick E. Hopkins

Summary: By systematically tailoring the cross-linking network among the atoms, the authors successfully suppressed the thermal transport in amorphous chalcogenide alloy SiTe, reducing the thermal conductivity by nearly an order of magnitude. The experimental results demonstrate that the ultralow thermal conductivity is attributed to the suppressed contribution of extended modes of vibration, particularly propagons and diffusons. This mechanism could potentially lead to significant advancements in thermal management for data storage and energy scavenging applications.

NATURE COMMUNICATIONS (2021)

Article Multidisciplinary Sciences

Suppressed electronic contribution in thermal conductivity of Ge2Sb2Se4Te

Kiumars Aryana, Yifei Zhang, John A. Tomko, Md Shafkat Bin Hoque, Eric R. Hoglund, David H. Olson, Joyeeta Nag, John C. Read, Carlos Rios, Juejun Hu, Patrick E. Hopkins

Summary: Integrated nanophotonics is an emerging research direction that has attracted great interests. By substituting tellurium with selenium in Ge2Sb2Se4Te, the thermal conductivity transitions from an electron to a phonon dominated regime.

NATURE COMMUNICATIONS (2021)

Article Multidisciplinary Sciences

Observation of solid-state bidirectional thermal conductivity switching in antiferroelectric lead zirconate (PbZrO3)

Kiumars Aryana, John A. Tomko, Ran Gao, Eric R. Hoglund, Takanori Mimura, Sara Makarem, Alejandro Salanova, Md Shafkat Bin Hoque, Thomas W. Pfeifer, David H. Olson, Jeffrey L. Braun, Joyeeta Nag, John C. Read, James M. Howe, Elizabeth J. Opila, Lane W. Martin, Jon F. Ihlefeld, Patrick E. Hopkins

Summary: Materials with tunable thermal properties are crucial for the development of solid-state refrigeration, energy scavenging, and thermal circuits. This study demonstrates the bidirectional switching of thermal conductivity in antiferroelectric PbZrO3 by manipulating phonon scattering rates. PbZrO3 shows potential as a fast, repeatable, simple trigger, and reliable thermal switch.

NATURE COMMUNICATIONS (2022)

Article Materials Science, Coatings & Films

Area selective deposition of ruthenium on 3D structures

Kartik Sondhi, Rahul Sharangpani, Ramy Nashed Bassely Said, Joyeeta Nag, Michael Gribelyuk, Senaka Kanakamedala, Raghuveer S. S. Makala

Summary: The adoption of new materials driven by trends in device miniaturization has contributed to significant advancements in semiconductor technology. Thin-film deposition and lithographic techniques are crucial for achieving further scaling of devices. Area selective deposition is a powerful technique that can eliminate the need for multiple lithography steps, making the process more efficient.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2022)

Article Engineering, Electrical & Electronic

Hardmask engineering by mask encapsulation for enabling next generation reactive ion etch scaling

Roshan J. Tirukkonda, Mark D. Kraman, Rahul Sharangpani, Kartik Sondhi, Aaron N. Fancher, Stephen R. Ross, Joyeeta Nag, Alexei L. Bogdanov, Raghuveer S. Makala, Senaka K. Kanakamedala

Summary: Miniaturization and scaling of semiconductor devices require innovative techniques to sustain advancements. A promising trend is the migration from 2D to 3D device architectures, which necessitate the fabrication of high-aspect-ratio narrow features across different materials. To address the challenges of reactive ion etching, a new concept of hardmask engineering is introduced, involving a bilayer hardmask scheme consisting of a conventional hardmask encapsulated with a thin layer of etch-resistant ruthenium (Ru) layer. Experimental results show that this engineered hardmask improves etch profile and critical dimensions (CDs).

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2023)

Article Materials Science, Multidisciplinary

Doping-driven electronic and lattice dynamics in the phase-change material vanadium dioxide

Kannatassen Appavoo, Joyeeta Nag, Bin Wang, Weidong Luo, Gerd Duscher, E. Andrew Payzant, Matthew Y. Sfeir, Sokrates T. Pantelides, Richard F. Haglund

PHYSICAL REVIEW B (2020)

Proceedings Paper Engineering, Electrical & Electronic

3Di DC-DC Buck Micro Converter With TSVs, Grind Side Inductors, and Deep Trench Decoupling Capacitors in 32nm SOI CMOS

John Safran, Giri N. K. Rangan, Venkata Nr Vanukuru, Sandeep Torgal, Vikram Chaturvedi, Sarath K. P. Lal, Shahid Butt, Gary Maier, Alberto Cestero, Thuy Tran-Quinn, Joyeeta Nag, Sami Rosenblatt, Norman Robson, Matthew Angyal, Troy Graves-Abe, Daniel Berger, James Pape, Subramanian Iyer

2016 IEEE 66TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC) (2016)

Proceedings Paper Engineering, Electrical & Electronic

Doping-controlled Coherent Electron-Phonon Coupling in Vanadium Dioxide

Kannatassen Appavoo, Bin Wang, Joyeeta Nag, Matthew Y. Sfeir, Sokrates T. Pantelides, Richard F. Haglund

2015 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) (2015)

Proceedings Paper Engineering, Electrical & Electronic

Assessment of minority-alloy component segregation (e.g. Mn, Al) in back end of line copper trench structures using Kelvin probe technique

Joyeeta Nag, Kriti Kohli, Andrew Simon, Siddarth Krishnan, Christopher Parks, Shishir Ray, Felipe Tijiwa-Birk

2014 25TH ANNUAL SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE (ASMC) (2014)

暂无数据