Article
Nanoscience & Nanotechnology
Dingrong Liu, Zenghua Cai, Yu-Ning Wu, Shiyou Chen
Summary: In this paper, the formation energies and emission line shapes for various defects in CuI are studied through first-principles simulations. It is discovered that the intrinsic point defect cluster V-I+Cui(2+) is the source of the long wavelength emission. The prediction of a significant reduction in defect concentration as the chemical condition changes supports this finding.
Article
Chemistry, Multidisciplinary
Pierre Lottigier, Davide Maria Di Paola, Duncan T. L. Alexander, Thomas F. K. Weatherley, Pablo Saenz de Santa Maria Modrono, Danxuan Chen, Gwenole Jacopin, Jean-Francois Carlin, Raphael Butte, Nicolas Grandjean
Summary: By inserting an In-containing underlayer during the growth of InGaN quantum wells (QWs) on thin GaN buffer layers, the emission efficiency of the QWs on silicon substrates is significantly increased. This study also reveals the crucial role of point defects in limiting the efficiency of InGaN QWs, even with a lower density compared to threading dislocations.
Article
Materials Science, Multidisciplinary
Ummer Altaf, Mohd Zubair Ansari, Seemin Rubab
Summary: The synthesis of Sn1-xAlxO2 (x = 0.0, 0.01, 0.02, 0.03, 0.04) nanoparticles by the sol-gel method and their characterization using various techniques revealed that increasing the aluminium content led to a decrease in the crystallite size and optical band gap. Photoluminance measurements showed violet emissions for all samples, with the 3% doped sample exhibiting the lowest intensity, indicating its potential for applications in photocatalysis and lithium-ion batteries. Additionally, 3% aluminium doping was found to be the optimum concentration for tin oxide samples in photocatalytic applications.
MATERIALS CHEMISTRY AND PHYSICS
(2023)
Article
Materials Science, Multidisciplinary
Holger Fiedler, Vedran Jovic, David R. G. Mitchell, Jerome Leveneur, Emma Anquillare, Kevin E. Smith, John Kennedy
Summary: The evolution of uniaxial strain in Zr+ implanted epitaxial AlN films on Si substrates leads to an expansion of the c-axis in the crystal structure, with the main defects being Zr-Al, V-Al, and V-N. Monte Carlo simulations predict the formation of cation-rich and anion-rich regions within the implantation range, with an anion-rich layer undergoing a polarity inversion. The effective piezoelectric coefficient decreases as the fluence of Zr+ increases, due to strain- and compositionally-induced polarity changes and crystalline damage.
Article
Materials Science, Multidisciplinary
Ashok Chaudhari, Xin Cui, Bram Hoex, Lachlan Hyde, Charlie N. Ironside, Wojciech M. Jadwisienczak, Martin E. Kordesch, Faiz Rahman, R. D. Vispute
Summary: This study investigates the UV-emitting potential of ZnO and MgZnO semiconductors, finding that single crystal thin film materials produced through MOCVD and ALD methods are the most suitable for UV-emitting devices, while sputtered materials are unsuitable.
MATERIALS RESEARCH BULLETIN
(2022)
Article
Chemistry, Physical
Mohamed A. Helal, H. M. El-Sayed, Ahmed A. Maarouf, Mohamed M. Fadlallah
Summary: The study investigated the impact of different pore structures on 2D-TMD using density functional theory, revealing higher stability for smaller pores, lattice deformation and decreased Young's modulus with increasing pore size. Certain systems exhibited magnetism due to missing metal atoms, while the emergence of metal states at pore edges resulted in some systems being half-metallic. Oxygen passivation restored metallic behavior in the systems.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
(2021)
Article
Nanoscience & Nanotechnology
Daniel B. Straus, Robert J. Cava
Summary: By using solid-state synthesis, the band gap of halide perovskite CsPbBr3 can be continuously widened through homovalent substitution, allowing its optical properties to be tailored for absorptive and emissive applications.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Materials Science, Multidisciplinary
Tatsuya Honbu, Daisuke Takeuchi, Kimiyoshi Ichikawa, Shinya Ohmagari, Tokuyuki Teraji, Masahiko Ogura, Hiromitsu Kato, Toshiharu Makino, Ichiro Shoji
Summary: The density of dislocations in the intrinsic layer of a pin diamond diode was estimated using 2PPL imaging, showing no impact from the generation and diffusion of free carriers. This is important for assessing diamond device performance as it allows for avoiding the influence of free carrier propagation on the adjacent layer.
DIAMOND AND RELATED MATERIALS
(2021)
Article
Chemistry, Multidisciplinary
Oscar E. Jaime-Acuna, Roberto E. San-Juan Farfan, Humberto Villavicencio, Manuel Herrera, Oscar Raymond Herrera
Summary: The optical, electronic, and vibrational properties of quaternary CdZnOS semiconductor nano-particles grown on MOR were studied using various spectroscopic techniques, showing unique characteristics related to quantum confinement effect and diverse transitions associated with size and stoichiometry of the nanoparticles. These properties make the nanocomposite a promising photoactive material for photocatalysis applications.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
(2021)
Article
Engineering, Electrical & Electronic
Yu Chen, S. W. Fan, G. Y. Gao
Summary: Through first-principles calculations, it has been found that wide-gap semiconductor CaS is an ambipolar semiconductor with n-type and p-type conductivities achievable through doping. Thermodynamic simulations indicate that as the temperature increases, the doping concentrations and carrier densities continue to rise.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Chemistry, Physical
Zeyu Chi, Corinne Sartel, Yunlin Zheng, Sushrut Modak, Leonid Chernyak, Christian M. Schaefer, Jessica Padilla, Jose Santiso, Arie Ruzin, Anne-Marie Goncalves, Jurgen von Bardeleben, Gerard Guillot, Yves Dumont, Amador Perez-Tomas, Ekaterine Chikoidze
Summary: The room temperature hole conductivity of β-Ga2O3 was achieved by growing high-quality films on a sapphire substrate. The conductivity was significantly enhanced by zinc doping with low activation energy.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Chemistry, Physical
Peter Udvarhelyi, Anton Pershin, Peter Deak, Adam Gali
Summary: This study demonstrates that the C-centre in silicon can be used as an optically readable quantum register in the L-band wavelength region. Through theoretical characterisation and experimental research, the properties of the C-centre are closely examined, and quantum optics protocols are established for controlling and reading the quantum states. These findings provide new possibilities for the development of silicon-based quantum technology.
NPJ COMPUTATIONAL MATERIALS
(2022)
Article
Multidisciplinary Sciences
Timo Neumann, Sascha Feldmann, Philipp Moser, Alex Delhomme, Jonathan Zerhoch, Tim van de Goor, Shuli Wang, Mateusz Dyksik, Thomas Winkler, Jonathan J. Finley, Paulina Plochocka, Martin S. Brandt, Clement Faugeras, Andreas V. Stier, Felix Deschler
Summary: The study explores the magneto-optical properties of Mn-doped Ruddlesden-Popper hybrid perovskites, revealing magnetically brightened excitonic luminescence with strong circular polarization and the brightening of dark exciton population by state mixing with bright excitons in the presence of a magnetic field. Unexpectedly, the circular polarization of dark exciton luminescence follows the Brillouin-shaped magnetization, indicating spin-dependent exciton dynamics at early times after excitation and a potential Mn-mediated spin-flip process.
NATURE COMMUNICATIONS
(2021)
Article
Multidisciplinary Sciences
Zikang Ye, Xing Lin, Na Wang, Jianhai Zhou, Meiyi Zhu, Haiyan Qin, Xiaogang Peng
Summary: Phonon-assisted up-conversion photoluminescence boosts energy by absorbing vibration energy, and colloidal quantum dots can be used as efficient, stable, and cost-effective emitters for up-conversion photoluminescence.
NATURE COMMUNICATIONS
(2021)
Review
Chemistry, Physical
Tsukasa Torimoto, Tatsuya Kameyama, Taro Uematsu, Susumu Kuwabata
Summary: I-III-VI multinary semiconductors, with low toxicity, are being studied as potential quantum dot materials to replace toxic Cd and Pb-based binary semiconductors. The flexibility in design and control of electronic and optical properties of multinary quantum dots has attracted significant attention. This review provides a historical overview of the synthesis of I-III-VI quantum dots and discusses strategies for better control of their optoelectronic properties. Applications in luminescent devices and light energy conversion systems are also discussed, highlighting the potential for improved performance by controlling the size and composition of the quantum dots. Understanding the unique features of I-III-VI quantum dots will enable the development of novel applications utilizing their complexity.
JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY C-PHOTOCHEMISTRY REVIEWS
(2023)