Lifetime recovery in p-type Czochralski silicon due to the reconfiguration of boron–oxygen complexes via a hole-emitting process

标题
Lifetime recovery in p-type Czochralski silicon due to the reconfiguration of boron–oxygen complexes via a hole-emitting process
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 98, Issue 16, Pages 162104
出版商
AIP Publishing
发表日期
2011-04-21
DOI
10.1063/1.3581215

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