AC conductance measurement and analysis of the conduction processes in HfOx based resistive switching memory
出版年份 2011 全文链接
标题
AC conductance measurement and analysis of the conduction processes in HfOx based resistive switching memory
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 99, Issue 23, Pages 232105
出版商
AIP Publishing
发表日期
2011-12-07
DOI
10.1063/1.3663968
参考文献
相关参考文献
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- A High-Yield $\hbox{HfO}_{x}$-Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar Integration
- (2011) X. A. Tran et al. IEEE ELECTRON DEVICE LETTERS
- An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation
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- Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
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- Study on the electrical conduction mechanism of bipolar resistive switching TiO2 thin films using impedance spectroscopy
- (2010) Min Hwan Lee et al. APPLIED PHYSICS LETTERS
- A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM
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- Resistive Random Access Memory (ReRAM) Based on Metal Oxides
- (2010) Hiroyuki Akinaga et al. PROCEEDINGS OF THE IEEE
- Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
- (2009) Rainer Waser et al. ADVANCED MATERIALS
- Improved Uniformity of Resistive Switching Behaviors in HfO[sub 2] Thin Films with Embedded Al Layers
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- Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices
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