期刊
APPLIED PHYSICS LETTERS
卷 99, 期 5, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3622138
关键词
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资金
- Human Frontier Science Program
- Center for Nanoscale Mechatronics
- NRF [20100000160]
- Priority Research Center [20100029617]
- MEST [KRF-2008-313-C00308]
We use atomic force microscopy lithography to write charge patterns in close proximity to carbon nanotube field-effect transistor devices. The silicon dioxide substrate retains the charge for days, allowing various charge configurations to be tested. We show that the written charge can move the Fermi level in the nanotube by 1 eV and we use this charge lithography to reconfigure a field-effect transistor into a pn junction. The substrate charge can be erased and rewritten, offering a new tool for prototyping nanodevices and optimizing electrostatic doping profiles. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3622138]
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