Article
Nanoscience & Nanotechnology
Shaoyuan Wang, Zhihao Yang, Dong Wang, Chao Tan, Lei Yang, Zegao Wang
Summary: The study investigates the intensity- and polarization-sensitive photo-detection based on α-In2Se3, a 2D material. It is found that α-In2Se3 shows a strong photoelectric performance and polarization-sensitive detection, providing new opportunities for future dual-mode photodetection.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Chemistry, Physical
Tiantian Dai, Zanhong Deng, Xiaodong Fang, Huadong Lu, Yong He, Junqing Chang, Shimao Wang, Nengwei Zhu, Liang Li, Gang Meng
Summary: By controlling the use of shadow masks and the thickness of the copper film, the position and spacing of CuO microhemisphere nanowires can be well controlled, allowing for bridging of adjacent nanowires and benefiting highly sensitive TMA sensors and broad band photodetectors. The electrical response of 3.62 to 100 ppm TMA is comparable to state-of-the-art CuO-based sensors, suggesting promising commercial device applications of CuO nanowires through in situ assembly of RB-MNAs device arrays using common lithographic technologies.
Article
Chemistry, Physical
Mustafa A. Yildirim, Kasif Teker
Summary: This paper presents a silicon carbide single nanowire ultraviolet photodetector with high sensitivity and responsivity, offering unique opportunities in new generation, flexible, self-powered nanoscale optoelectronics.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Nanoscience & Nanotechnology
Guanghui Wang, Bin Han, Chun Hong Mak, Jialong Liu, Bo Liu, Peng Liu, Xiaodong Hao, Hongyue Wang, Shufang Ma, Bingshe Xu, Hsien-Yi Hsu
Summary: This study demonstrates a photodetector with a mixed-dimensional van der Waals heterostructure of hBN/Gr/1D CH3NH3PbI3, which shows improved carrier extraction, excellent responsivity, and specific detectivity. The device also exhibits high stability when exposed to air due to the atomic encapsulation of hBN.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Materials Science, Multidisciplinary
Atul Kumar Singh, Priyanka Chetri, Jay Chandra Dhar
Summary: In this article, MSM based Au/WO3 Nanowires (NWs) were fabricated on n-type silicon substrate using glancing angle deposition inside the RF sputtering chamber for high performance ultraviolet photodetector (UV-PD). The field emission scanning electron microscope analysis shows uniform and vertically oriented WO3 NWs on Si substrate. The non-linear I-V characteristics of the device represents that there is good Schottky junction formation at the metal-semiconductor interface. The fabricated Au/WO3 NW/Si device showed high responsivity of 462.6 A/W, specific detectivity of 1.06 x 10^13 Jones and a low noise-equivalent power of 3.17 x 10^-13 respectively, under 380 nm light illumination. A fast UV-PD response of 2.7 ms and 2.8 ms was obtained at 0 V.
Article
Chemistry, Physical
Chao Chen, Yi-Ming Zhao, Hai-Long Yu, Xin-Yu Jiao, Xian-Gang Hu, Xin Li, Peng-Xiang Hou, Chang Liu, Hui-Ming Cheng
Summary: Bolometric photodetectors based on single-wall carbon nanotubes (SWCNTs) have advantages of ul-trawide absorption spectrum, high charge carrier mobility, good processability, and high mechanical flexibility. However, their detection performance needs improvement. We fabricated a flexible infrared photodetector based on high quality SWCNT films. The device exhibited an ul-trahigh detectivity and a short response time. The photocurrent response of the detector was influenced by the structure of the SWCNT network.
Article
Nanoscience & Nanotechnology
Debopriya Dutta, Subhrajit Mukherjee, Michael Uzhansky, Pranab K. Mohapatra, Ariel Ismach, Elad Koren
Summary: Utilizing the ferroelectric polarization switching in α-In2Se3, multilevel nonvolatile conduction states were engineered in a partially overlapping α-In2Se3-MoS2-based ferroelectric semiconducting field effect device. The intercoupled ferroelectric nature of α-In2Se3 allows for nonvolatile switching between n-i and n-i-n type junction configurations based on a novel edge state actuation mechanism, paving the way for subnanometric scale nonvolatile device miniaturization. Additionally, the induced asymmetric polarization enables enhanced photogenerated carriers' separation, resulting in high photoresponse in the visible range and strong nonvolatile modulation of excitonic emission channels in the MoS2 monolayer.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Chemistry, Physical
Lei Ge, Bin Li, Guo Li, Xiwei Wang, Kuan Yew Cheong, Yan Peng, Jisheng Han, Shuqiang Li, Yingxin Cui, Yu Zhong, Peng Cui, Dufu Wang, Mingsheng Xu, Xiangang Xu
Summary: This paper presents a solar-blind photo transistor based on hydrogen-terminated diamond, which exhibits enhanced responsivity and photocurrent due to the internal gain. The fabricated phototransistor shows high photoresponsivity and detectivity under 213 nm light illumination at different gate and drain voltages. The device's performance can be well tuned by adjusting the gate voltage.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2023)
Article
Nanoscience & Nanotechnology
Dingshan Zheng, Hailu Wang, Ruoling Chen, Long Li, Jiaxiang Guo, Yue Gu, Muhammad M. Zubair, Xiangxiang Yu, Long Jiang, Desheng Zhu, Yan Xiong, Han Zhang, Wen-Xing Yang, Jinshui Miao
Summary: Ferroelectric polymer has been found to significantly enhance the performance and responsivity of SnS2 NW photodetectors, leading to a noticeable improvement in detectivity. Additionally, the rise and fall time of the device are significantly faster with polarization depletion.
Article
Materials Science, Multidisciplinary
Haozhe Li, Kai Zhang, Xiu Li, Baiquan Liu, Lianbi Li, Zengxia Mei, Tongsheng Chen, Qinzhuang Liu, Wenzhi Yu, Jian Yuan, Haoran Mu, Shenghuang Lin
Summary: This paper introduces a narrow bandgap, direct bandgap 2D semiconductor Ta2NiSe5 and makes an a-In2Se3/Ta2NiSe5 heterojunction photodetector, achieving a wide response wavelength range of 405-1550 nm and high performance. The potential barriers of holes at the a-In2Se3/Ta2NiSe5 interface are much higher than that of electrons, resulting in ultra-high responsivity. The photodetector shows a photoresponsivity of 12 A/W under a self-driven state and 533 A/W under a slight bias voltage of 0.1 V at 520 nm illumination. The highest detectivity is over 8.2 x 1013 Jones. The rise and fall time is shortly at 25 and 423 μs, respectively. The high-sensitive, broadband, and fast photodetector has great potential in the emerging field of 2D optoelectronics.
MATERIALS & DESIGN
(2023)
Article
Chemistry, Multidisciplinary
Cheng Jia, Shuangxiang Wu, Jinze Fan, Chaojie Luo, Minghui Fan, Ming Li, Lanping He, Yuanjun Yang, Hui Zhang
Summary: This study presents a simple integrated process and high-performance photodetector based on an alpha-In2Se3/Si vertical hybrid-dimensional heterojunction. The photodetector achieves a self-powered, highly sensitive photoresponse in the ferroelectric polarization up state, with an on/off ratio of 4.5 x 105 and detectivity of 1.6 x 1013 Jones, as well as a fast response time of 43 μs. The depolarization field generated by the remanent polarization of the ferroelectric material provides a strategy for enhancing and modulating photodetection. The negative correlation between the enhancement photoresponsivity factor and the photovoltaic behavior within the heterojunction was discovered.
Article
Nanoscience & Nanotechnology
Hasmat Mondal, Samit K. Ray, Poulomi Chakrabarty, Soumili Pal, Gaurab Gangopadhyay, Sourav Das, Shreyasi Das, Rabaya Basori
Summary: Chlorophyll-b extracted from spinach leaves is studied for its potential use on Si nanowire heterostructures. The Chl-b/SiNW heterostructure shows superior optoelectronic performances compared to control Si NW devices, including high sensitivity and faster response time.
ACS APPLIED NANO MATERIALS
(2021)
Article
Engineering, Environmental
Wenping Ren, Qiuhong Tan, Qianjin Wang, Yingkai Liu
Summary: The hybrid approach of combining organic-inorganic halide perovskite with semiconductor materials improves photosensitivity and spectral response of photodetectors. Photodetectors based on CH3NH3PbI3 MAs/CdSe NB hybrid structures exhibit high photo-to-dark current ratio, excellent optoelectric performance, and fast rise and decay times, making them promising for optoelectronic applications.
CHEMICAL ENGINEERING JOURNAL
(2021)
Article
Chemistry, Physical
Haizheng Hu, Lipeng Deng, YuChen Zhu, Chao Wu, Daoyou Guo, Shunli Wang
Summary: Gallium oxide (Ga2O3) semiconductor with a wide bandgap of 4.9 eV has garnered increasing interest in the optoelectronic field. However, the fabrication of Ga2O3 pn junction remains challenging due to the infancy of p-Ga2O3 doping technology. In this study, a solar-blind photodetector was developed using vertical alpha/beta-Ga2O3 junction nanorod arrays (NRAs) and a Ti3C2-Ag NWs top electrode, which exhibited improved conductivity, optical transparency, and excellent photo-electric performance.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Chemistry, Multidisciplinary
Tao Qi, Yaolun Yu, Yanyan Hu, Kangjie Li, Nan Guo, Yi Jia
Summary: A high-performance near-IR photodetector is fabricated by assembling SWCNT films onto n-type Ge substrate with ozone treatment, and the formed oxide layer suppresses leakage current and carriers' recombination. The device exhibits enhanced responsivity, detectivity, and rapid response time.
Article
Engineering, Electrical & Electronic
Zhong-Da Zhang, Xu Gao, Jie Luo, Ya-Nan Zhong, Jian-Long Xu, Sui-Dong Wang
Summary: An organic field-effect transistor nonvolatile memory with multibit storage capability and selective UV response was demonstrated. The memory showed good retention for all states, and the switching between states was controlled by programming/erasing pulses rather than voltage or duration.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Nanoscience & Nanotechnology
Cong Shen, Xu Gao, Cheng Chen, Shan Ren, Jian-Long Xu, Yi-Dong Xia, Sui-Dong Wang
Summary: An optoelectronic synapse based on ZnO nanowire transistor has been achieved in this work, which can emulate both short-term and long-term synaptic plasticity. It has high recognition accuracy and great potential in the development of neuromorphic visual systems.
Article
Nanoscience & Nanotechnology
Pratik Kumar, Kaichen Zhu, Xu Gao, Sui-Dong Wang, Mario Lanza, Chetan Singh Thakur
Summary: This article highlights the importance of utilizing two-dimensional materials in the fabrication of integrated circuits. It also presents a hybrid architecture combining a hexagonal boron nitride crossbar array with CMOS circuitry to implement the extreme learning machine algorithm. The experimental results demonstrate the superior performance of this hybrid architecture in complex classification tasks.
NPJ 2D MATERIALS AND APPLICATIONS
(2022)
Article
Physics, Applied
Ding-Guo Zhang, Xu Gao, Wei Tang, Ya-Nan Zhong, Jian-Long Xu, Sui-Dong Wang
Summary: This study demonstrates the potential of a type of ferroelectric polymer thin-film memristors in emulating synaptic plasticity. The device's memristive characteristics are derived from the asymmetrical design of top electrodes capacitively coupled with a floating bottom electrode, allowing for local modulation of ferroelectric polarization in the ferroelectric terpolymer film. Basic synaptic functions, such as continuous increase/decrease in synaptic weight and paired-pulse facilitation, are successfully emulated using these ferroelectric polymer memristors. This research provides a promising approach to implementing ferroelectric mechanisms in electronic synapses.
APPLIED PHYSICS EXPRESS
(2022)
Article
Materials Science, Multidisciplinary
Qi-Jun Sun, Jinxuan Wu, Meng Zhang, Yu Yuan, Xu Gao, Sui-Dong Wang, Zhenhua Tang, Chi-Ching Kuo, Yan Yan
Summary: This study investigates solution-processed indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) with a bilayer structure by embedding an ultrathin layer of indium zinc oxide (IZO) between the gate dielectric and IGZO film. The optimized IGZO/IZO bilayer TFTs exhibit a high field-effect mobility and improved bias-stress stability compared to single-layer IGZO devices. In addition, the temperature-dependent mobility and V-T characteristics are studied to understand the trap distribution in the bilayer IGZO/IZO and single-layer IGZO TFTs. Moreover, low-voltage bilayer TFTs with high mobility are demonstrated.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2022)
Article
Engineering, Electrical & Electronic
Yu Yuan, Jian-Long Xu, Jing-Yue Zhang, Xu Gao, Ya-Nan Zhong, Sui-Dong Wang
Summary: A simple strategy of using 2-Methoxyethanol as the solvent greatly improves the photoresponsivity of PbS/ZnO photodiodes. The optimized photodiodes show superior figures of merit, including low dark current density, high photoresponsivity, high specific detectivity, and fast response/recovery time.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Nanoscience & Nanotechnology
Hao Zong, Min Wang, Weinan Chen, Zhong-Da Zhang, Jia-Wei Cai, Cong Shen, Li-Xing Li, Shui-Long Kang, Yuan Fang, Gang Zhou, Sui-Dong Wang
Summary: A comparison of organic single crystals of different dimensions but with the same material reveals insights into their carrier injection mechanism. Two-dimensional (2D) and microrod single crystals with identical crystalline structure of a thiopyran derivative, C8-SS, were grown on a glycerol surface. Organic field-effect transistors (OFETs) based on the 2D C8-SS single crystal exhibit superior performance, especially in contact resistance (RC). RC is found to be influenced by the resistance of the crystal bulk in the contact region, with the 2D OFETs having significantly reduced RC due to their tiny thickness. The 2D OFETs demonstrate high operational stability and channel mobility up to 5.7 cm2/V center dot s, highlighting the potential of 2D molecular single crystals in organic electronics.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Chemistry, Multidisciplinary
Zhao-Yang Yin, Yang Chen, Yang-Yang Zhang, Yu Yuan, Qian Yang, Ya-Nan Zhong, Xu Gao, Jing Xiao, Zhao-Kui Wang, Jian-Long Xu, Sui-Dong Wang
Summary: This study demonstrates that surface defects induced by iodine vacancies are the main cause of the dark current density (J(dark)) in perovskite photodiodes. By passivating the surface defects through a simple treatment, low J(dark) and enhanced photoresponse are achieved. The critical role of surface defects suggests that making trap-free perovskite thin films is a top priority for high-performance perovskite photodiodes.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Yang Liu, Yiyuan Gao, Qian Yang, Gao Xu, Xingyu Zhou, Guozheng Shi, Xingyi Lyu, Hao Wu, Jun Liu, Shiwen Fang, Muhammad Irfan Ullah, Leliang Song, Kunyuan Lu, Muhan Cao, Qiao Zhang, Tao Li, Jianlong Xu, Suidong Wang, Zeke Liu, Wanli Ma
Summary: We achieved a low-cost and scalable synthesis of SWIR PbS quantum dot inks for the first time through an extensive investigation of reaction kinetics. The solar cell based on these PbS SWIR quantum dot inks exhibited a record-high power conversion efficiency of 1.44% with an 1100 nm cutoff silicon filter, and the photodetector device showed a low dark current density of 2x10(-6) A cm(-2) at -0.8 V reverse bias and a high external quantum efficiency of 70% at approximately 1300 nm. Our results realize the direct synthesis of low-cost and scalable SWIR quantum dot inks and may accelerate the industrialization of consumer SWIR technologies.
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
(2023)
Article
Materials Science, Multidisciplinary
Meng-Ting Jiang, Qian Yang, Jian-Long Xu, Yu Yuan, Jing-Yue Zhang, Ya-Nan Zhong, Xu Gao, Sui-Dong Wang
Summary: Monolithically integrated pixels with stacked PbS colloidal quantum dot (CQD) photodiodes and organic blocking diodes are developed for short-wavelength infrared (SWIR) crossbar imaging arrays. These pixels exhibit normally-OFF behavior due to hole blocking under zero and forward biases. This monolithic integration effectively suppresses electrical crosstalk and reduces standby power consumption, resulting in a high-performance visible-SWIR imaging sensor.
ADVANCED OPTICAL MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Chen-Hui Zhu, Xu Gao, Hai-Tian Huang, Li-Xing Li, Jian-Long Xu, Ya-Nan Zhong, Wei Tang, Xiao-Jun Guo, Sui-Dong Wang
Summary: A type of organic thin film neuromorphic devices with a planar two-terminal architecture has been developed for inhibitory regulation of synaptic weight upon selective UV illumination. The effect of cumulative hole trapping in the polymer electret layer has been demonstrated to modulate the device conductance in a nonvolatile manner. The device exhibits UV-induced long-term depression accompanied by enhanced short-term potentiation, suggesting its potential applications in photonic neuromorphic computing.
ADVANCED MATERIALS TECHNOLOGIES
(2023)
Article
Engineering, Electrical & Electronic
Hai-Tian Huang, Jie Luo, Jia-Ling Wu, Xue-Er Han, Zhong-Da Zhang, Jia-Wei Cai, Xu Gao, Jian-Long Xu, Ya-Nan Zhong, Bin Dong, Sofia M. Morozova, Sui-Dong Wang
Summary: This article presents a solution-processed memristor matrix that enables synchronous and controlled inter-device interaction. The behavior of the matrix, characterized by the ion redistribution effect and electrochromic feature, can emulate clustered synaptic plasticity, suggesting a new paradigm for synaptic devices.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Chemistry, Multidisciplinary
Kaichen Zhu, Giovanni Vescio, Sergio Gonzalez-Torres, Julia Lopez-Vidrier, Juan Luis Frieiro, Sebastian Pazos, Xu Jing, Xu Gao, Sui-Dong Wang, Joaquin Ascorbe-Muruzabal, Juan A. Ruiz-Fuentes, Albert Cirera, Blas Garrido, Mario Lanza
Summary: Inkjet printing electronics is a fast-growing market, expected to reach 23 billion USD by 2026. Incorporating 2D materials, such as h-BN, can greatly enhance device properties and enable new applications. This study presents a cost-effective method for synthesizing h-BN inks and fabricating memristors with attractive stochastic properties for data encryption in electronic circuits.
Article
Physics, Applied
Qian Yang, Hao-Wen Huang, Gao Xu, Yu Yuan, Meng-Ting Jiang, Ya-Nan Zhong, Xu Gao, Jian-Long Xu, Sui-Dong Wang
Summary: This study demonstrates a simple and controlled method to optimize detectivity in PbS CQD SWIR photodetectors by reducing J(dark) through the introduction of self-formed AlOx and eliminating the influence of interfacial states on minority hole injection.
APPLIED PHYSICS LETTERS
(2023)
Article
Chemistry, Organic
Weinan Chen, Hao Zong, Yujie Xie, Jianping Xu, Jia-Wei Cai, Sui-Dong Wang, Gang Zhou
Summary: This study successfully synthesized two series of polycyclic compounds containing chalcogenopyrano[3,2-b]chalcogenopyran subunits. By fusing two cyclopentadiene rings, the antiaromatic chalcogenopyrano[3,2-b]chalcogenopyrans were transformed into stable aromatic subunits, showing potential applications in organic semiconductors.
ORGANIC CHEMISTRY FRONTIERS
(2023)
