Field effect mobility model in organic thin film transistor

An analytical model is presented here for the field effect mobility in organic thin-film transistors. It is developed rigorously using the variable range hopping theory, the Gaussian density of states distribution function and the transistor model. Based on the proposed model, a variety of temperature and gate voltage dependencies of the field effect mobility can be well described. Good agreement between the calculation and recent experimental data is also observed. (c) 2011 American Institute of Physics. [doi:10.1063/1.3543900]