期刊
APPLIED PHYSICS LETTERS
卷 96, 期 20, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3430039
关键词
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资金
- 863 project of China [2009AA03Z305]
- National Natural Science Foundation of China [60876031, 60806044]
- National Basic Research Program of China [2010CB933803]
- Hong Kong Research Grants Council (RGC) [CityU 112608]
n-ZnO/p-GaN heterojunction light-emitting diodes with and without a sandwiched AlN layer were fabricated. The electroluminescence (EL) spectrum acquired from the n-ZnO/p-GaN displays broad emission at 650 nm originating from ZnO and weak emission at 440 nm from GaN, whereas the n-ZnO/AlN/p-GaN exhibits strong violet emission at 405 nm from ZnO without GaN emission. The EL intensity is greatly enhanced by inserting a thin AlN intermediate layer and it can be attributed to the suppressed formation of the GaO(x) interfacial layer and confinement effect rendered by the AlN potential barrier layer. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3430039]
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