期刊
APPLIED PHYSICS LETTERS
卷 96, 期 10, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3356221
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- LKY PDF [2/08]
Room-temperature ultraviolet random lasing action is demonstrated from a p-GaN/annealed i-ZnO: Al (3%)/n-ZnO: Al (5%) buried heterojunction diode with a 2 mu m rib waveguide. Excellent electrical-to-optical conversion efficiency is achieved by strong electrical and optical confinement of a buried heterojunction rib waveguide structure. Hence, emission intensity (threshold current) can be enhanced (reduced) by similar to 9 times (similar to 40%). Directional emission as well as controllability on the number of the random lasing modes can also be achieved. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3356221]
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