期刊
APPLIED PHYSICS LETTERS
卷 96, 期 22, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3427417
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-
资金
- department of science and technology (DST), Govt. of India
Photoconductivity relaxation in rf magnetron sputtered ZnO thin films integrated with ultrathin tin metal overlayer is investigated. Charge carriers induced at the ZnO-metal interface by the tin metal overlayer compensates the surface lying trap centers and leads to the enhanced photoresponse. On termination of ultraviolet radiation, recombination of the photoexcited electrons with the valence band holes leaves the excess carriers deeply trapped at the recombination center and holds the dark conductivity level at a higher value. Equilibrium between the recombination centers and valence band, due to trapped charges, eventually stimulates the persistent photoconductivity in the Sn/ZnO photodetectors. (C) 2010 American Institute of Physics. [doi:10.1063/1.3427417]
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