期刊
APPLIED PHYSICS LETTERS
卷 97, 期 7, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3478515
关键词
gallium compounds; III-V semiconductors; indium compounds; quantum well devices; semiconductor quantum wells; solar cells; wide band gap semiconductors
资金
- National Science Council
- National Nanoscience and Nanotechnology Program in Taiwan [NSC-98-2120-M-007-009, NSC-98-2112-M-007-014-MY3]
Conventional InGaN/GaN light-emitting diodes based on planar quantum well structures do not allow for efficient long-wavelength operation beyond the blue region due to a strong quantum confined Stark effect in lattice-mismatched polar InGaN quantum wells. Here we overcome the limitation by using self-assembled GaN nanorod arrays as strain-free growth templates for thick InGaN nanodisks. In combination with enhanced carrier localization and high crystalline quality, this approach allows us to realize full-color InGaN nanodisk emitters. By tailoring the numbers, positions, and thicknesses of polychromatic nanodisk ensembles embedded vertically in the GaN nanorod p-n junction, we are able to demonstrate natural white (color temperature similar to 6000 K) electroluminescence from InGaN/GaN nanorod arrays. (C) 2010 American Institute of Physics. [doi:10.1063/1.3478515]
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