Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy

标题
Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 97, Issue 5, Pages 051113
出版商
AIP Publishing
发表日期
2010-08-09
DOI
10.1063/1.3478011

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