期刊
APPLIED PHYSICS LETTERS
卷 96, 期 13, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3373630
关键词
fullerene devices; fullerenes; organic field effect transistors; organic semiconductors; oscillators; thin film transistors
资金
- Promotion of Innovation through Science and Technology in Flanders (IWT-Vlaanderen)
Recently, complex circuits of organic thin-film transistors have been shown. The use of complementary logic can significantly ease the design of large integrated circuits. However, the performance of complementary logic in organic thin-film technology has not been able to equivale that of unipolar logic, due to the difficulty to densely integrate and simultaneously optimize p-type and n-type transistors on a single substrate. Here, we develop an optimized complementary process for C(60) n-type and pentacene p-type transistors, both having bottom-gate bottom-contact geometry. Using this complementary technology, we show ring-oscillators with a stage-delay below 1 mu s at a supply-voltage of 20 V.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据