期刊
APPLIED PHYSICS LETTERS
卷 96, 期 15, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3409121
关键词
aluminium compounds; gallium compounds; III-V semiconductors; polarisation; semiconductor quantum wells; valence bands; wide band gap semiconductors
资金
- [21016006]
The optical polarization properties of Al-rich AlGaN thin quantum wells on AlN substrates with various substrate orientations are numerically calculated using a 6x6 k center dot p Hamiltonian. The calculation results show that the predominant polarization direction abruptly switches from the in-plane direction to the c-axis direction at an Al composition of similar to 0.76 in quantum wells on c-plane substrates. It is also shown that the polarization characteristics drastically change by small inclination of the substrates due to valence band mixing effects. It is found that the use of the vicinal substrates as well as semipolar and nonpolar substrates could be beneficial in improving optical device performance.
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