期刊
APPLIED PHYSICS LETTERS
卷 97, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3467835
关键词
II-VI semiconductors; photoconductivity; photovoltaic effects; semiconductor epitaxial layers; spin-orbit interactions; valence bands; wide band gap semiconductors; zinc compounds
资金
- National Natural Science Foundation of China [60990313, 10774001, 60736033]
- National Basic Research Program of China [2006CB604908, 2006CB921607]
We report a strong circular photogalvanic effect (CPGE) in ZnO epitaxial films under interband excitation. It is observed that CPGE current is as large as 100 nA/W in ZnO, which is about one order in magnitude higher than that in InN film while the CPGE currents in GaN films are not detectable. The possible reasons for the above observations are the strong spin orbit coupling in ZnO or the inversed valence band structure of ZnO. (C) 2010 American Institute of Physics. [doi:10.1063/1.3467835]
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