标题
Electroluminescence from Er-doped Si-rich silicon nitride light emitting diodes
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 97, Issue 8, Pages 081109
出版商
AIP Publishing
发表日期
2010-08-26
DOI
10.1063/1.3483771
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Enhancement of the 1.54 μm Er3+ emission from quasiperiodic plasmonic arrays
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- Linewidth narrowing and Purcell enhancement in photonic crystal cavities on an Er-doped silicon nitride platform
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- Observation of Transparency of Erbium-doped Silicon nitride in photonic crystal nanobeam cavities
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- Towards population inversion of electrically pumped Er ions sensitized by Si nanoclusters
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- Correlation between the microstructure and electroluminescence properties of Er-doped metal-oxide semiconductor structures
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- Temperature dependence of the energy transfer from amorphous silicon nitride to Er ions
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- Energy transfer and 1.54 μm emission in amorphous silicon nitride films
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- Visible and 1.54 $\mu$m Emission From Amorphous Silicon Nitride Films by Reactive Cosputtering
- (2009) S. Yerci et al. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
- Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions
- (2009) O. Jambois et al. JOURNAL OF APPLIED PHYSICS
- Enhanced light emission from erbium doped silicon nitride in plasmonic metal-insulator-metal structures
- (2009) Yiyang Gong et al. OPTICS EXPRESS
- Electroluminescence from silicon-rich nitride/silicon superlattice structures
- (2008) J. Warga et al. APPLIED PHYSICS LETTERS
- Carrier dynamics and erbium sensitization in silicon-rich nitride nanocrystals
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