期刊
APPLIED PHYSICS LETTERS
卷 97, 期 1, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3459961
关键词
conducting polymers; current density; dark conductivity; gallium arsenide; III-V semiconductors; leakage currents; MOCVD; MOCVD coatings; nanostructured materials; organic-inorganic hybrid materials; passivation; solar cells
资金
- NSF [ECCS-0824273, CHE-0527015]
- DoD [NSSEFF N00244-09-1-0091]
- ONR [N00014-04-1-0410]
- NSF IGERT [0903720]
- U.S. Department of Energy, Office of Basic Energy Sciences [DE-AC52-06NA25396]
- Sandia National Laboratories [DE-Ac04-94AL85000]
- Direct For Education and Human Resources [0903720] Funding Source: National Science Foundation
- Division Of Graduate Education [0903720] Funding Source: National Science Foundation
In this work, we study hybrid solar cells based on poly(3-hexylthiophene)-coated GaAs nanopillars grown on a patterned GaAs substrate using selective-area metal organic chemical vapor deposition. The hybrid solar cells show extremely low leakage currents (I congruent to 45 nA @-1V) under dark conditions and an open circuit voltage, short circuit current density, and fill factor of 0.2 V, 8.7 mA/cm(2), and 32%, respectively, giving a power conversion efficiency of eta=0.6% under AM 1.5 G illumination. Surface passivation of the GaAs results in further improvement, yielding eta=1.44% under AM 1.5 G illumination. External quantum efficiency measurements of these polymer/inorganic solar cells are also presented. (C) 2010 American Institute of Physics. [doi:10.1063/1.3459961]
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