4.6 Article

Accurate ab initio predictions of III-V direct-indirect band gap crossovers

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APPLIED PHYSICS LETTERS
卷 97, 期 9, 页码 -

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AIP Publishing
DOI: 10.1063/1.3485297

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  1. DOE-BES-DMS [DE-FG02-99ER45795]

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We report the compositional dependence of the electronic band structure for a range of III-V alloys. Standard density functional theory is insufficient to mimic the electronic gap energies at different symmetry points of the Brillouin zone. The Heyd-Scuseria-Ernzerhof hybrid functional with screened exchange accurately reproduces the experimental band gaps and, more importantly, the alloy concentration of the direct-indirect gap crossovers for the III-V alloys studied here: AlGaAs, InAlAs, AlInP, InGaP, and GaAsP. (C) 2010 American Institute of Physics. [doi:10.1063/1.3485297]

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