4.6 Article

La-doped EuO: A rare earth ferromagnetic semiconductor with the highest Curie temperature

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APPLIED PHYSICS LETTERS
卷 96, 期 23, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.3416911

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  1. Institute for Molecular Science
  2. MEXT of Japan [21840057]
  3. Grants-in-Aid for Scientific Research [21840057, 22340107] Funding Source: KAKEN

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We report the fabrication of single-crystalline La-doped EuO thin films with a Curie temperature (T-C) of about 200 K, the highest among rare-earth compounds without transition metals. From first-principle band calculation and x-ray diffraction measurement, the observed increase in T-C cannot be explained only by the increase in hybridization intensity due to lattice contraction and the increase in up-spin electrons of the Eu 5d state caused by the electron doping. Hybridization between the Eu 4f and donor states and/or Ruderman-Kittel-Kasuya-Yoshida interaction mediated by the doped La 5d state is a possible origin of the increase in T-C. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3416911]

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