期刊
APPLIED PHYSICS LETTERS
卷 96, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3315887
关键词
aluminium compounds; epitaxial growth; gallium compounds; Hall effect; hole density; III-V semiconductors; magnesium; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; semiconductor superlattices; wide band gap semiconductors; X-ray diffraction
资金
- National High Technology Program of China [2007AA03Z403]
- National Natural Science Foundation of China [60776042, 60676032, 60477011]
- National Basic Research Program of China [2006CB921607]
AlN layer was grown as interlayer between undoped GaN and Mg doped Al0.14Ga0.86N/GaN superlattices (SLs) epilayer to modulate the strain distribution between Al0.14Ga0.86N barrier and GaN well layers in SLs sample. Strain relaxation was observed in the SLs sample with AlN interlayer by x-ray diffraction reciprocal space mapping method. The measured hole concentration of SLs sample with AlN interlayer at room temperature was over 1.6x10(18) cm(-3) but that was only 6.6x10(16) cm(-3) obtained in SLs sample without AlN interlayer. Variable temperature Hall-effect measurement showed that the acceptor activation energy decreased from 150 to 70 meV after inserting the AlN layer, which indicated that the strain modulation of SLs induced by AlN interlayer was beneficial to the Mg acceptor activation and hole concentration enhancement.
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