期刊
APPLIED PHYSICS LETTERS
卷 97, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3477957
关键词
chalcogenide glasses; diffusion; internal stresses; mass transfer; semiconductor thin films; surface treatment
资金
- Hungarian Scientific Research Fund [K67685, CK80126]
- TAMOP [4.2.1-08/1-2008-003]
The kinetics of photoinduced variations in surface profile in chalcogenide glass films under illumination is described. It is demonstrated that the competition between the stress-induced atomic flux (toward irradiated regions of the film) and the diffusion flux induced by an increase in the bulk energy due to broken bonds (and directed from irradiated to dark regions) can result in either a positive or negative net mass transfer in the irradiated region. Depending on the light intensity, one can obtain either formation of bumps or depressions in the illuminated regions. (C) 2010 American Institute of Physics. [doi:10.1063/1.3477957]
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