期刊
APPLIED PHYSICS LETTERS
卷 96, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3309694
关键词
deep levels; gallium compounds; hyperfine interactions; muon probes; muonium
资金
- Engineering and Physical Sciences Research Council, U. K. [EP/G004447/1]
- U.K. Science and Technology Facilities Council
- EPSRC [EP/G004447/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/G004447/1] Funding Source: researchfish
The electrical nature of muonium in the transparent conducting oxide material Ga2O3 is investigated via muon-spin rotation and relaxation spectroscopy. It is found to be a shallow donor, with an effective donor depth of 15 < E-D < 30 meV and a hyperfine splitting of 0.13 +/- 0.01 MHz. This is in contrast to the deep level observed in the majority of semiconductors but supports the recent suggestion that muonium should be a shallow donor across the class of transparent conducting oxides. These observations suggest that hydrogen will also be a shallow donor in Ga2O3, with important implications both for unintentional conductivity and deliberate n-type doping of this material.
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