期刊
APPLIED PHYSICS LETTERS
卷 96, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3372635
关键词
bending; dark conductivity; III-V semiconductors; indium compounds; membranes; nanostructured materials; photoconductivity; photodetectors; polymers
资金
- U.S. AFOSR MURI [FA9550-08-1-0337]
- U.S. ARO [W911NF-09-1-0505]
- U.S. AFRL [FA 8650-07-2-5061]
Large-area (3x3 mm(2)) flexible photodetectors were realized, based on crystalline InP semiconductor nanomembranes transferred to flexible polyethylene terephthalate substrates. Very low dark current (a few microamperes) and high responsivity (0.12 A/W) were demonstrated for flexible InP p-i-n photodetectors. Bending characteristics were also investigated for this type of flexible crystalline semiconductor photodetector, and it was found that, whereas the dark current was independent of bending radii, the photocurrent degraded, depending on the bending radii.
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