Review
Chemistry, Multidisciplinary
Fabrizio Guzzetta, Cameron W. Jellett, Jalal Azadmanjiri, Pradip Kumar Roy, Saeed Ashtiani, Karel Friess, Zdenek Sofer
Summary: The attention in recent decades has been focused on the optoelectronic properties of indium and gallium chalcogenides, leading to advancements in fundamental and applied science. Group III-VI compounds have laminated structures that can be exfoliated to monolayers. Besides indium and gallium chalcogenides, there are other uncommon compounds in the family of group III-VI compounds, which have various crystal lattices, including layered structures. Aluminum chalcogenides show potential as anodes in batteries and semiconductors. Studies on thallium-based compounds are still exploring their semiconducting and thermoelectric properties. This review aims to summarize the significant features of these unusual materials and propose new studies to revive their potential in future technology.
Article
Nanoscience & Nanotechnology
Zhongjiang Sun, Qianqian Wu, Sheng Wang, Fan Cao, Yimin Wang, Lufa Li, Haihui Wang, Lingmei Kong, Limin Yan, Xuyong Yang
Summary: Indium phosphide (InP) quantum dots (QDs) with highly luminescent InP/ZnSe/ZnS QDs were successfully synthesized by constructing Se-rich shielding layers on the surfaces of InP cores, which improved the external quantum efficiency of QLED devices at high luminance.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Materials Science, Multidisciplinary
Qianqian Wu, Lin Wang, Fan Cao, Sheng Wang, Lufa Li, Guohua Jia, Xuyong Yang
Summary: This study reports the efficient and stable InP green QLEDs by effectively bridging QDs and ETL using chloride ions. Cl ions passivate the oxygen vacancy defects of ZnMgO NPs and facilitate the hole transport of QDs, leading to more balanced charge injection in the devices. The optimized InP QLED achieves the best overall performance with a peak EQE of 13.8% and an operational lifetime of 5944 h.
ADVANCED OPTICAL MATERIALS
(2023)
Article
Optics
Hyun Jeong, Ga Hyun Cho, Mun Seok Jeong
Summary: We propose an efficient method to reduce efficiency droop in InGaN QWs by redistributing carrier localization through thermal annealing, resulting in increased internal quantum efficiency (IQE) in this study.
JOURNAL OF LUMINESCENCE
(2022)
Article
Chemistry, Physical
Giane B. Damas, Karl Ronnby, Henrik Pedersen, Lars Ojamae
Summary: This report investigates the reaction pathways and mechanisms involved in the crystal growth of indium nitride (InN) thin film in atomic layer deposition (ALD) techniques using trimethylindium (TMI) and ammonia (NH3) precursors. The study provides important insights for the optimization of InN film preparation.
APPLIED SURFACE SCIENCE
(2022)
Article
Optics
A. Pandey, Y. Malhotra, P. Wang, K. Sun, X. Liu, Z. Mi
Summary: This paper demonstrates the performance of N-polar InGaN/GaN nanowire sub-microscale red light emitting diodes (LEDs) for the first time. These LEDs exhibit higher efficiency and brightness compared to conventional red-emitting micro-LEDs. In-situ annealing significantly enhances the optical emission intensity, and the fabricated LED sizes are extremely small.
PHOTONICS RESEARCH
(2022)
Article
Chemistry, Physical
Lianna Chen, Zhiyuan Qin, Shuming Chen
Summary: In this study, a new method has been developed to achieve high-resolution pixelated emission by controlling the thickness of transparent electrodes, resulting in a color-converting cavity that can selectively convert unpatterned quantum-dot white emission into saturated red, green, and blue emission. This method enables ultrahigh density red, green, and blue emission with a resolution of approximately 1700 pixels per inch, as well as achieving a color gamut of 111% NTSC.
Article
Chemistry, Inorganic & Nuclear
Guojian Chen, Qian Wu, Quan Zhang, Laihui Luo, Weiping Li, Peng Du
Summary: Eu2+-activated Sr8Si4O12Cl8 cyan-emitting phosphors were designed to solve the problems of low luminescence efficiency and thermal quenching. The resultant phosphors exhibited a dazzling cyan emission when excited at 387 nm, with maximum intensity achieved at a Eu2+ content of 4 mol%. The phosphors also demonstrated zero-thermal quenching luminescence, maintaining 106% of their starting value even at a temperature of 503 K. The synthesized phosphors showed potential for applications in full spectrum white-LEDs, field-emission displays, and anti-counterfeiting.
DALTON TRANSACTIONS
(2023)
Article
Chemistry, Physical
Xinyu Shen, Hua Wu, Xiaoyu Zhang, Meili Xu, Junhua Hu, Jinyang Zhu, Bin Dong, William W. Yu, Xue Bai
Summary: The all-solution process for inorganic perovskite nanocrystals (PNCs) LEDs shows great potential for new-generation illumination and displays, but the challenge lies in the injection barriers and charge injection imbalance. The introduction of CBP into the hole transport layer (HTL) efficiently modulates the charge carrier mobility and energy level, resulting in barrier-free charge injection and optimal performance for solution-processed PNC LEDs. The luminance of red LEDs reaches 2990 cd m(-2) and the external quantum efficiency achieves 8.1%, with improved turn-on voltage and roll-off due to more balanced charge injection.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Hongchang Tao, Shengrui Xu, Xiaomeng Fan, Jincheng Zhang, Yue Hao
Summary: The study shows that N-polar AlGaN-based deep ultraviolet LEDs outperform Ga-polar LEDs in terms of light output power and wall-plug efficiency. By introducing a staircase-like p-type interlayer structure, the operation voltage of N-polar LEDs is reduced and the wall-plug efficiency is further increased.
IEEE PHOTONICS JOURNAL
(2021)
Article
Chemistry, Multidisciplinary
Hongyu Yang, Si Li, Lei Zhang, Wenbin Xiang, Yi Zhang, Xiaoyong Wang, Min Xiao, Yiping Cui, Jiayu Zhang
Summary: Semiconductor quantum dots have advantages in optoelectronic devices, but charged exciton states are unavoidable. This study synthesized CdSe/CdZnS/ZnS core/alloy shell/shell quantum dots with high photoluminescence quantum yield and systematically studied their multiexciton spectra and dynamics. The results showed that the band-edge biexciton is influenced by Coulomb interaction and Stark effect. A vertical microcavity surface-emitting laser device was fabricated using these quantum dots.
Article
Chemistry, Physical
Li Song, Lixin Huang, Yuan Liu, Xiaoyang Guo, Chong Geng, Shu Xu, Yuanqin Xia, Yuan Zhang, Nannan Luan, Yongsheng Hu
Summary: An efficient bilateral interfacial defect passivation strategy was demonstrated for high-performance PeLEDs based on thermally deposited CsPbBr3, which significantly suppressed nonradiative defects and balanced charge injection effectively, resulting in PeLEDs with high luminance, current efficiency, external quantum efficiency, and lifetime.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2021)
Review
Chemistry, Multidisciplinary
Biao Zhao, Zhan'ao Tan
Summary: This article summarizes the advances in the application of CDs in LEDs, including their roles as active emission layer and interface transport layer materials, device structure, and preparation methods. The opportunities and challenges for achieving high-performance CD-based LED devices are also discussed.
Review
Materials Science, Multidisciplinary
Zhaojun Liu, Byung-Ryool Hyun, Yujia Sheng, Chun-Jung Lin, Mengyuan Changhu, Yonghong Lin, Chih-Hsiang Ho, Jr-Hau He, Hao-Chung Kuo
Summary: Micro-light-emitting diodes (Micro-LEDs) based on gallium nitride (GaN) materials offer versatile platforms for various applications, including displays, data communication tools, photodetectors, and sensors. By combining with quantum dots, Micro-LEDs can achieve efficient full-color displays and high-speed visible light communications.
ADVANCED MATERIALS TECHNOLOGIES
(2022)
Article
Engineering, Electrical & Electronic
Yi Lu, Chuanju Wang, Victor Paiva De Oliveira, Zhiyuan Liu, Xiaohang Li
Summary: The study demonstrates the importance of inverse design of n-type and p-type layers in generating opposite polarization-induced fields to suppress electron overflow and enhance hole injection in III-nitride UV LEDs. By utilizing a buried tunneling junction (BTJ) composed of n-AlGaN/i-InGaN/p-AlGaN, significant enhancement in LED output power can be achieved through optimizing the composition and thickness of the InGaN tunneling layer.
IEEE PHOTONICS TECHNOLOGY LETTERS
(2021)
Article
Physics, Applied
Dip Joti Paul, Arjuman Ara Mimi, Arnab Hazari, Pallab Bhattacharya, Md Zunaid Baten
JOURNAL OF APPLIED PHYSICS
(2019)
Article
Physics, Applied
Anthony Aiello, Yuanpeng Wu, Zetian Mi, Pallab Bhattacharya
APPLIED PHYSICS LETTERS
(2020)
Article
Physics, Applied
Kunook Chung, Ayush Pandey, Tuba Sarwar, Anthony Aiello, Zetian Mi, Pallab Bhattacharya, Pei-Cheng Ku
APPLIED PHYSICS LETTERS
(2020)
Article
Optics
Mahitosh Biswas, Ravinder Kumar, Arka Chatterjee, Yuanpeng Wu, Zetain Mi, Pallab Bhattacharya, Samir Kumar Pal, Subhananda Chakrabarti
JOURNAL OF LUMINESCENCE
(2020)
Article
Nanoscience & Nanotechnology
Ankit Udai, Anthony Aiello, Tarni Aggarwal, Dipankar Saha, Pallab Bhattacharya
Summary: This study investigated the femtosecond carrier and photon dynamics in self-organized In0.27Ga0.73N/GaN QDs grown by molecular beam epitaxy. The unique phenomenon in the dynamics is attributed to the contrast in carrier density caused by the different effective masses of carriers.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Physics, Condensed Matter
Tarni Aggarwal, Ankit Udai, Debashree Banerjee, Vikas Pendem, Shonal Chouksey, Pratim Saha, Sandeep Sankaranarayanan, Swaroop Ganguly, Pallab Bhattacharya, Dipankar Saha
Summary: The ultrafast nonlinear carrier-photon dynamics of GaN-based optoelectronic devices with nanostructures are studied, focusing on the impact of excited-state dynamics on device performance. Experimental and theoretical research shows the importance of understanding carrier and photon dynamics in these nanostructures.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
(2021)
Article
Nanoscience & Nanotechnology
Tarni Aggarwal, Ankit Udai, Pratim K. Saha, Swaroop Ganguly, Pallab Bhattacharya, Dipankar Saha
Summary: Efficiency droop at high carrier-injection regimes is a concern in InGaN/GaN quantum-confined hetero-structure-based light-emitting diodes (LEDs). This study demonstrates a potential solution through the positive effects from an optical cavity in suppressing the Auger recombination rate and highlights its technological importance.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Chemistry, Analytical
Araghni Bhattacharya, Satyajit Mahata, Ashutosh Bandyopadhyay, Biman B. Mandal, Vadivelu Manivannan
Summary: The molecule 2,4,5-tris(2-pyridyl)imidazole (L) has been evaluated as a probe for dual sensing of Hg2+ and Cu2+ ions. It shows a sensitive and selective response in the presence of both ions and can detect them in specific pH ranges. The probe's detection limit for Cu2+ is below the allowable limit prescribed by the United States Environmental Protection Agency. Experimental observations are supported by calculations and cell imaging studies.
Article
Nanoscience & Nanotechnology
Ankit Udai, Swaroop Ganguly, Pallab Bhattacharya, Dipankar Saha
Summary: This study investigates the ultrafast carrier dynamics of bound states in In0.14Ga0.86N/GaN quantum wells using femtosecond transient absorption spectroscopy. It reveals that both the ground and excited states contribute to the overall dynamics, which can be decoupled in the absorption spectra and time-resolved dynamics.
Article
Nanoscience & Nanotechnology
Fu-Chen Hsiao, Arnab Hazari, Yia-Chung Chang, Pallab Bhattacharya, John M. Dallesasse
Summary: This study presents a comprehensive theoretical modeling of photocurrent spectra generated by an In0.91Ga0.09N/ In0.4Ga0.6N disk-in-wire photodiode. The calculated photocurrent spectra show good agreement with experimental data, and the physical mechanisms for the observed prominent peaks are identified and investigated.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
(2022)
Article
Physics, Applied
Yuanpeng Wu, Ping Wang, Woncheol Lee, Anthony Aiello, Parag Deotare, Theodore Norris, Pallab Bhattacharya, Mackillo Kira, Emmanouil Kioupakis, Zetian Mi
Summary: Both 2D TMDs and III-V semiconductors are potential platforms for quantum technology, but each with its limitations. 2D TMDs have a large exciton binding energy and customizable quantum properties, but compatibility issues with existing industrial processes. On the other hand, III-nitrides have been widely used in light-emitting devices and power electronics but lack exploitation of excitonic quantum aspects. Recent advancements in 2D III-nitrides have shown promise in achieving room-temperature quantum technologies.
APPLIED PHYSICS LETTERS
(2023)
Article
Nanoscience & Nanotechnology
Anthony Aiello, Debabrata Das, Pallab Bhattacharya
Summary: In this study, InGaN/GaN quantum dot light-emitting diodes were demonstrated on silicon substrates with a planar buffer layer formed by coalescing GaN nanowires. The devices showed strong electroluminescence with a minimal blue shift and a polarization field. However, efficiency droop was observed beyond an injection of 40A/cm(2), possibly due to defect-assisted Auger recombination and carrier leakage from the active region.
ACS APPLIED NANO MATERIALS
(2021)
Proceedings Paper
Engineering, Electrical & Electronic
Kunook Chung, Ayush Pandey, Tuba Sarwar, Anthony Aiello, Zetian Mi, Pallab Bhattacharya, Pei-Cheng Ku
2020 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)
(2020)
Proceedings Paper
Engineering, Electrical & Electronic
A. Pandey, A. Aiello, J. Gim, R. Hovden, E. Kioupakis, P. Bhattacharya, Z. Mi
2020 IEEE PHOTONICS CONFERENCE (IPC)
(2020)
Article
Engineering, Electrical & Electronic
Debabrata Das, Anthony Aiello, Wei Guo, Pallab Bhattacharya
IEEE TRANSACTIONS ON NANOTECHNOLOGY
(2020)