4.6 Article

Effects of metal buffer layer on characteristics of surface acoustic waves in ZnO/metal/diamond structures

期刊

APPLIED PHYSICS LETTERS
卷 96, 期 15, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.3400219

关键词

aluminium; buffer layers; diamond; II-VI semiconductors; interdigital transducers; multilayers; surface acoustic wave transducers; surface acoustic waves; wide band gap semiconductors; zinc compounds

资金

  1. National Science Council of the Republic of China [NSC 98-2221-E-002-195, NSC 98-2221-E-214-019]

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The interdigital transducer (IDT)/ZnO/metal/diamond structure is investigated for use in the design surface acoustic wave (SAW) devices in the super-high-frequency (SHF) band. Simulation results indicate that adding a metal buffer layer with a finite thickness significantly increases the coupling coefficient. In the Sezawa mode, the coupling coefficient is 4.71% when an Al interlayer is applied. This coupling coefficient is 75% and 77% larger than those in the IDT/ZnO/diamond and IDT/ZnO/shorted surface/diamond structures, respectively. The results in this study are useful in designing SAW devices using diamond-based structures with a large coupling coefficient in the SHF band.

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