期刊
APPLIED PHYSICS LETTERS
卷 97, 期 15, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3488010
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资金
- EU [015783]
- Marie Curie RTN PARSEM [CT-2004-005583]
The catalyst- and self-induced pathways of GaN nanowire growth by molecular beam epitaxy are compared. The catalyst-induced nanowires elongate faster than the self-induced ones and their growth rate is fully determined by the impinging N rate. The self-induced nanowire growth rate is identical on both Si(111) and Si(001) and approaches the impinging N rate only for the few longest nanowires. This difference is attributed to the presence of the Ni-catalyst which enhances the incorporation of Ga at the nanowire tip while for the self-induced nanowires, growth is limited by the different incorporation rates on the nanowire tip and sidewall facets. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3488010]
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