期刊
APPLIED PHYSICS LETTERS
卷 97, 期 2, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3462960
关键词
aluminium alloys; high-k dielectric thin films; MOSFET; silicon compounds; titanium compounds; tungsten alloys; work function
资金
- Swiss National Foundation under the NCCR
A photovoltaic InAs quantum dot-under-a-well photodetector is reported with a peak responsivity at 7 mu m wavelength. In this structure, we implement an improved injection scheme, which allows a controlled feeding of the quantum dots through a modulation-doped InGaAs quantum well injector. A thin Al(0.3)Ga(0.7)As barrier significantly reduces the dark current and, at the same time, is responsible for the photovoltaic behavior. At 4 K and no applied bias, a responsivity of 2.5 mA/W and a detectivity of D* = 2.3 x 10(10) cm Hz(1/2)/W in the dark is measured. The T(BLIP) of the device is 60 K and the D* at this temperature is 2 x 10(9) cm Hz(1/2)/W. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3462960]
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