Single-gate accumulation-mode InGaAs quantum dot with a vertically integrated charge sensor

标题
Single-gate accumulation-mode InGaAs quantum dot with a vertically integrated charge sensor
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 96, Issue 4, Pages 042101
出版商
AIP Publishing
发表日期
2010-01-26
DOI
10.1063/1.3280368

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