期刊
APPLIED PHYSICS LETTERS
卷 96, 期 1, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3276543
关键词
bismuth compounds; dielectric polarisation; epitaxial layers; ferroelectric thin films; ferromagnetic materials; lattice constants; leakage currents; magnetic thin films; multiferroics; twinning; X-ray diffraction
资金
- National University of Singapore
- NUS [C-380-003-003-001]
- A*STAR/MOE [3979908M, 012 105 0038, R144-000-053-303, ARF R-144-000-53-107, 012 101 0131]
A twinning rotation structure is revealed by reciprocal space mappings obtained from synchrotron X-ray diffraction for the epitaxial BiFeO3 thin film that was grown on (001) SrTiO3 substrate. The lattice strain is not fully relaxed at a film thickness of 720 nm. The structure is indexed as a monoclinic with lattice parameters a=5.610(1) A degrees, b=5.529(1) A degrees, c=4.031(1) A degrees, and beta=89.34(1)degrees. The twinning rotation leads to an enhanced remanent polarization (2P(r)=164 mu C/cm(2), 2E(c)=510 kV/cm) and greatly reduced leakage current density of 1.2x10(-6) A/cm(2) at 100 kV/cm.
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