期刊
APPLIED PHYSICS LETTERS
卷 96, 期 10, 页码 -出版社
AIP Publishing
DOI: 10.1063/1.3318462
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资金
- National Natural Science Foundation of China [10704014]
- Young Scientists Foundation of Sichuan [009ZQ026-029]
- UESTC [JX0731]
- Chinese Academy of Sciences
- National Science Fund [60925016]
- Division of Materials Sciences and Engineering, Office of Basic Energy Sciences, U.S. Department of Energy [DE-AC05-76RL01830]
Codoping of p-type GaN nanowires with Mg and oxygen was investigated using first-principles calculations. The Mg becomes a deep acceptor in GaN nanowires with high ionization energy due to the quantum confinement. The ionization energy of Mg doped GaN nanowires containing passivated Mg-O complex decreases with increasing the diameter, and reduces to 300 meV as the diameter of the GaN nanowire is larger than 2.01 nm, which indicates that Mg-O codoping is suitable for achieving p-type GaN nanowires with larger diameters. The codoping method to reduce the ionization energy can be effectively used in other semiconductor nanostructures. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3318462]
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