期刊
APPLIED PHYSICS LETTERS
卷 97, 期 8, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3483756
关键词
electrical conductivity; hafnium compounds; interface states; MIM devices; platinum; X-ray photoelectron spectra
资金
- Japan's Ministry of Education, Culture, Sports, Science, and Technology
The interfacial electronic states of a Pt/HfO2/Pt diode were investigated by using hard x-ray photoelectron spectroscopy under bias operation. The application of a forward bias to the Pt/HfO2/Pt diode increased the Pt-O bonding peak, providing evidence of Pt electrode oxidization and oxygen vacancy formation around the Pt/HfO2 interface. Under a reverse bias, hafnium was drawn to the Pt electrode, where it took part in Hf-Pt bonding. We achieved the direct observation of oxygen migration at a Pt/HfO2 interface under device operation, which is the key to controlling the electrical properties of metals on oxides.
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