期刊
APPLIED PHYSICS LETTERS
卷 96, 期 24, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3454924
关键词
dislocations; electron energy loss spectra; gallium compounds; III-V semiconductors; interface structure; molecular beam epitaxial growth; scandium compounds; scanning-transmission electron microscopy; semiconductor epitaxial layers; semiconductor growth; semiconductor-insulator boundaries; transmission electron microscopy; wide band gap semiconductors
资金
- Electro-Optics Center of Pennsylvania State University
- Office of Naval Research [N00014-03-1-0721, N00014-04-1-0426]
The structure and chemistry of the (111)Sc2O3/(0001) GaN epitaxial interface grown by molecular-beam epitaxy have been investigated. High-resolution transmission electron microscopy reveals an abrupt Sc2O3/GaN interface with a hexagonal misfit dislocation network. These dislocations have Burgers vectors of (a/3)< 11 (2) over bar0 >(GaN) and line directions parallel to < 1 (1) over bar 00 >(GaN), with an average spacing of similar to 3.8 nm. Scanning transmission electron microscopy and electron energy loss spectrometry reveal the intermixing of Sc, O, and N over a region with a width of similar to 1.5 nm at the interface. (C) 2010 American Institute of Physics. [doi:10.1063/1.3454924]
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