Bistable resistance memory switching effect in amorphous InGaZnO thin films

标题
Bistable resistance memory switching effect in amorphous InGaZnO thin films
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 97, Issue 6, Pages 062109
出版商
AIP Publishing
发表日期
2010-08-12
DOI
10.1063/1.3479527

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