期刊
APPLIED PHYSICS LETTERS
卷 96, 期 19, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3427364
关键词
ab initio calculations; elemental semiconductors; nanostructured materials; permittivity; semiconductor thin films; silicon
Dielectric constants of Si (111) nanofilms with the double gate are studied in the full inversion regime by using the first-principles calculation. The calculations show that the dielectric constants are significantly smaller than that of the bulk. Further, the dielectric constants depend on the conduction type as well as on the film thickness. They also oscillate with a 2-bilayer-thickness for the p-channel case as the film thickness decreases. The suppressed dielectric constants are found in the channel center as well as in the channel surface. These findings open the way to artificial control of the dielectric constant in semiconductor nanostructures. (C) 2010 American Institute of Physics. [doi:10.1063/1.3427364]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据