4.6 Article

Electron and hole spin cooling efficiency in InAs quantum dots: The role of nuclear field

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APPLIED PHYSICS LETTERS
卷 96, 期 17, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.3394010

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III-V semiconductors; indium compounds; magnetic semiconductors; semiconductor quantum dots; spin dynamics

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  1. QUAMOS [ANR-09-NANO-030-04]

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The spin dynamics of a resident carrier, hole or electron, in singly charged InAs/GaAs quantum dots has been measured by pump-probe experiments. The relative strength of the hole to the electron hyperfine couplings with nuclei is obtained by studying the magnetic-field dependence of the resident-carrier spin polarization. We find, in good agreement with recent theoretical studies, that the hole hyperfine coupling is ten times smaller than the electron one.

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