Capacitance-voltage and retention characteristics of Pt/SrBi2Ta2O9/HfO2/Si structures with various buffer layer thickness

标题
Capacitance-voltage and retention characteristics of Pt/SrBi2Ta2O9/HfO2/Si structures with various buffer layer thickness
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 94, Issue 21, Pages 212907
出版商
AIP Publishing
发表日期
2009-05-31
DOI
10.1063/1.3147859

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