期刊
APPLIED PHYSICS LETTERS
卷 95, 期 10, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3224201
关键词
electrical resistivity; electrodes; gold; metal-semiconductor-metal structures; organic field effect transistors; organic semiconductors
资金
- National Science Council of Taiwan, Republic of China
The current-voltage characteristics of the gate-controlled three-terminal organic-based devices with memory effect and negative differential resistances (NDR) were studied. Gold and 9,10-di(2-naphthyl)anthracene (ADN) were used as the metal electrode and active channel layer of the devices, respectively. By using various gate-source voltages, the memory and NDR characteristics of the devices can be modulated. The memory and NDR characteristics of the devices were attributed to the formation of trapping sites in the interface between Au electrode and ADN active layer caused by the defects, when Au metal deposited on the ADN active layer.
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